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Authors: Jia XL, Huang XY, Tang Y, Yang LH, Chen DJ, Lu H, Zhang R, Zheng YD
Article Title: Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized AlInN/GaN High Electron Mobility Transistors.
Publication date: 2016
Journal: IEEE Electron Device Letters
Volume: 37
Issue: (7)
Page numbers: 913-915.
DOI: 10.1109/LED.2016.2567447
Alternative URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7470565
Abstract: In this letter, a first study on phosphate detection based on AlInN/GaN high electron mobility transistors (HEMTs) is presented. The ungated regions of GaN HEMT-based sensors were functionalized with the phosphate ion-imprinted polymer and their sensing behaviors were analyzed by detecting different concentrations of phosphate solutions. The results show that the AlInN/GaN sensor exhibits an ultrasensitive response and a specific recognition to phosphate anion and reaches a detection limit below 0.02 mg/L level, which is much lower than the limited indicator level of 0.1 mg/L for the plankton growth, while the AlInN/GaN sensor shows a higher sensitivity to phosphate anion when compared with the AlGaN/GaN sensor. This ultra-high sensitivity is attributed to the use of thinner barrier layer in the AlInN/GaN heterostructure, which makes 2-D electron gas channel more sensitive to the change of surface charge
Template and target information: phosphate ion
Author keywords: AlInN, GaN, Ion-imprinted polymer, ion-imprinted polymer,, phosphate anion detection, thinner barrier
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