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Inventors: King Smith O, Hoobler EK
Patent Title: Ion sensitive device and method of fabrication
Publication date: 2014
Publication number: US20140348707

Abstract: A sol-gel deposition technique that forms ion sensitive layers is compatible with CMOS fabrication methods and is applied to build sensors of concentrations of solutions of selected target ions. The ion sensitive sensor may be formed on an exposed portion of a signal trace of a printed circuit board. Additionally, the ion sensitive layer may be formed within an ion sensitive field effect transistor.
URL: http://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141127&DB=EPODOC&locale=en_EP&CC=US&NR=2014348707A1&KC=A1&ND=4

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